Comparison of Germanium Bipolar Junction Transistor Models for Real-Time Circuit Simulation
Published in Proceedings of the 20th International Conference on Digital Audio Effects, Edinburgh, Scotland, 2017
The Ebers-Moll model has been widely used to represent Bipolar Junction Transistors (BJTs) in Virtual Analogue (VA) circuits. An investigation into the validity of this model is presented in which the Ebers-Moll model is compared to BJT models of higher complexity, introducing the Gummel-Poon model to the VA field.
Recommended citation: B. Holmes, M. Holters, M. van Walstijn. “Comparison of Germanium Bipolar Junction Transistor Models for Real-Time Circuit Simulation”, Proceedings of the 20th International Conference on Digital Audio Effects, Edinburgh, Scotland, Sept. 2017